TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW

Vishay Telefunken

www.vishay.de

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Rev. 5, 30-Jun-00

1 (6)

Document Number 85065

Silicon NPN Planar RF Transistor

Electrostatic sensitive device.

Observe precautions for handling.

Applications

For low noise and small signal low power amplifiers.

This

transistor

has

superior

noise

figure

and

associated gain performance at UHF, VHF and micro-

wave frequencies.

Features

D Low power applications

D Very low noise figure

13 579

21

4

3

94 9279

TSDF1205 Marking: F05

Plastic case (SOT 143)

1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter

95 10831

2

1

43

94 9278

TSDF1205R Marking: 05F

Plastic case (SOT 143R)

1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter

2

1

3

13 653

4

13 566

TSDF1205W Marking: WF0

Plastic case (SOT 343)

1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter

2

1

3

4

13 566

13 654

TSDF1205RW Marking: W0F

Plastic case (SOT 343R)

1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter

Absolute Maximum Ratings

Parameter

Test Conditions

Symbol

Value

Unit

Collector-base voltage

9

V

Collector-emitter voltage

4

V

Emitter-base voltage

2

V

Collector current

12

mA

Total power dissipation

40

mW

Junction temperature

150

°C

Storage temperature range

–65 to +150

°C