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TSAL7200 датащи(PDF) 2 Page - Vishay Siliconix

номер детали TSAL7200
подробное описание детали  GaAs/GaAlAs IR Emitting Diode in 짰5 mm (T-13/4) Package
PDF  5 Pages
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производитель  VISHAY [Vishay Siliconix]
домашняя страница  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

TSAL7200 датащи(HTML) 2 Page - Vishay Siliconix

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TSAL7200
Vishay Telefunken
2 (5)
Rev. 1, 20-May-99
www.vishay.de
• FaxBack +1-408-970-5600
Document Number 81012
Basic Characteristics
Tamb = 25_C
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Forward Voltage
IF = 100 mA, tp = 20 ms
VF
1.35
1.6
V
g
IF = 1 A, tp = 100 ms
VF
2.6
3
V
Temp. Coefficient of VF
IF = 100mA
TKVF
–1.3
mV/K
Reverse Current
VR = 5 V
IR
10
mA
Junction Capacitance
VR = 0 V, f = 1 MHz, E = 0
Cj
25
pF
Radiant Intensity
IF = 100 mA, tp = 20 ms
Ie
40
60
mW/sr
y
IF = 1.0 A, tp = 100 ms
Ie
340
500
mW/sr
Radiant Power
IF = 100 mA, tp = 20 ms
fe
35
mW
Temp. Coefficient of
fe
IF = 20 mA
TKfe
–0.6
%/K
Angle of Half Intensity
ϕ
±17
deg
Peak Wavelength
IF = 100 mA
lp
940
nm
Spectral Bandwidth
IF = 100 mA
Dl
50
nm
Temp. Coefficient of
lp
IF = 100 mA
TKlp
0.2
nm/K
Rise Time
IF = 100 mA
tr
800
ns
Fall Time
IF = 100 mA
tf
800
ns
Virtual Source Diameter
method: 63% encircled
energy
ø
2.8
mm
Typical Characteristics (Tamb = 25_C unless otherwise specified)
0
20
406080
0
50
100
150
200
250
Tamb – Ambient Temperature ( °C )
100
94 7957 e
RthJA
Figure 1. Power Dissipation vs. Ambient Temperature
0
20
406080
0
50
100
150
200
250
Tamb – Ambient Temperature ( °C )
100
96 11986
RthJA
Figure 2. Forward Current vs. Ambient Temperature



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