MJE371 datasheet(1/2 Pages) ISC

номер детали	MJE371

подробное описание детали	isc Silicon PNP Power Transistor

PDF	2 Pages

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

MJE371

DESCRIPTION

·Collector–Emitter Sustaining Voltage—

: VCEO(SUS) = -40V

·DC Current Gain—

: hFE = 40(Min) @ IC= -1A

·Complement to Type MJE521

APPLICATIONS

·Designed for use in general-purpose amplifier and switching

circuits.

·Recommended for use in 5~20 Watt audio amplifiers utilizing

complementary symmetry circuitry.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-40

V

VCEO

Collector-Emitter Voltage

-40

V

VEBO

Emitter-Base Voltage

-4

V

IC

Collector Current-Continuous

-4

A

ICM

Collector Current-peak

-8

A

IB

B

Base Current

-2

A

PC

Collector Power Dissipation

TC=25℃

40

W

Ti

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

3.12

℃/W

isc Website：www.iscsemi.cn

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