TIP135 datasheet(1/2 Pages) ISC

номер детали	TIP135

подробное описание детали	isc Silicon PNP Darlington Power Transistor

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlington Power Transistor

TIP135

DESCRIPTION

·High DC Current Gain-

: hFE = 1000(Min)@ IC= -4A

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS) = -60V(Min)

·Low Collector-Emitter Saturation Voltage-

: VCE(sat) = -2.0V(Max)@ IC= -4A

·Complement to Type TIP130

APPLICATIONS

·Designed for general-purpose amplifier and low-speed

switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-60

V

VCEO

Collector-Emitter Voltage

-60

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-8

A

ICM

Collector Current-Peak

-12

A

IB

B

Base Current- Continuous

-0.3

A

Collector Power Dissipation

@TC=25℃

70

PC

Collector Power Dissipation

@Ta=25℃

2

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.785

℃/W

Rth j-a

Thermal Resistance,Junction to Ambient

63.5

℃/W

isc Website：www.iscsemi.cn

Аналогичный номер детали - TIP135

производитель	номер детали	датащи	подробное описание детали
Mospec Semiconductor	TIP135	150Kb / 3P	POWER TRANSISTORS(8.0A,60-100V,70W)
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Transys Electronics	TIP135	719Kb / 5P	PNP SILICON POWER DARLINGTONS
STMicroelectronics	TIP135	41Kb / 4P	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Oct-1995

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