BU2508DF datasheet(1/3 Pages) ISC

номер детали	BU2508DF

подробное описание детали	isc Silicon NPN Power Transistor

PDF	3 Pages

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BU2508DF

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= 700V (Min)

·High Switching Speed

·Built-in Damper Diode

APPLICATIONS

·Designed for use in horizontal deflection circuits of

color TV receivers.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCES

Collector- Emitter Voltage(VBE= 0)

1500

V

VCEO

Collector-Emitter Voltage

700

V

VEBO

Emitter-Base Voltage

7.5

V

IC

Collector Current- Continuous

8

A

ICM

Collector Current-Peak

15

A

IB

B

Base Current- Continuous

4

A

IBM

Base Current-Peak

6

A

PC

Collector Power Dissipation

@ TC=25℃

45

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

2.8

℃/W

isc Website：www.iscsemi.cn

Аналогичный номер детали - BU2508DF

производитель	номер детали	датащи	подробное описание детали
NXP Semiconductors	BU2508DF	71Kb / 7P	Silicon Diffused Power Transistor July 1998 Rev 1.600
Wing Shing Computer Com...	BU2508DF	78Kb / 1P	NPN TRIPLE DIFFUSE PLANAR SILICON TRANSISTOR(COLOR TV HORIZONTAL OUTPUT APPLICATIONS)
NXP Semiconductors	BU2508DF	71Kb / 7P	Silicon Diffused Power Transistor July 1998-Rev 1.600
Savantic, Inc.	BU2508DF	118Kb / 3P	Silicon NPN Power Transistors
Tiger Electronic Co.,Lt...	BU2508DF	89Kb / 1P	Silicon Diffused Power Transistor

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