TEST2600 datasheet(2/5 Pages) VISHAY

номер детали	TEST2600

подробное описание детали	Silicon NPN Phototransistor

PDF	5 Pages

Scroll/Zoom	100%

производитель	VISHAY [Vishay Siliconix]

домашняя страница	http://www.vishay.com

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TEST2600

Vishay Telefunken

2 (5)

Rev. 2, 20-May-99

www.vishay.de

• FaxBack +1-408-970-5600

Document Number 81562

Basic Characteristics

Tamb = 25_C

Parameter

Test Conditions

Symbol

Min

Typ

Max

Unit

Collector Emitter Breakdown

Voltage

IC = 1 mA

V(BR)CE

Collector Dark Current

VCE = 20 V, E = 0

ICEO

100

Collector Emitter Capacitance

VCE = 5 V, f = 1 MHz, E=0

CCEO

Collector Light Current

Ee = 1 mW/cm2,

l = 950 nm, VCE = 5 V

Ica

2.5

Angle of Half Sensitivity

horizontal

ϕ1

±30

deg

vertical

ϕ2

±60

deg

Wavelength of Peak Sensitivity

920

Range of Spectral Bandwidth

l0.5

850...980

Collector Emitter Saturation

Voltage

Ee = 1 mW/cm2,

l = 950 nm, IC = 0.1 mA

VCEsat

0.3

Turn–On Time

VS = 5 V, IC = 5 mA,

RL = 100 W

ton

Turn–Off Time

VS = 5 V, IC = 5 mA,

RL = 100 W

toff

Cut–Off Frequency

VS = 5 V, IC = 5 mA,

RL = 100 W

110

kHz

Typical Characteristics (Tamb = 25_C unless otherwise specified)

020

4060

100

125

Tamb – Ambient Temperature ( °C )

100

94 8308

RthJA

Figure 1. Total Power Dissipation vs.

Ambient Temperature

94 8249

100

Tamb – Ambient Temperature ( °C )

100

101

102

103

104

VCE = 10V

Figure 2. Collector Dark Current vs.

Ambient Temperature

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