MJ11014 datasheet(1/2 Pages) ISC

номер детали	MJ11014

подробное описание детали	isc Silicon NPN Darlington Power Transistor

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Website：www.iscsemi.cn

isc Silicon NPN Darlington Power Transistor

MJ11014

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 90V(Min.)

·High DC Current Gain-

: hFE= 1000(Min.)@IC= 20A

·Low Collector Saturation Voltage-

: VCE (sat)= 3.0V(Max.)@ IC= 20A

·Complement to Type MJ11013

APPLICATIONS

·Designed for use as output devices in complementary

general purpose amplifier applications.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

90

V

VCEO

Collector-Emitter Voltage

90

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continunous

30

A

ICM

Collector Current-Peak

50

A

IB

Base Current-Continunous

1

A

PC

Collector Power Dissipation

@TC=25℃

200

W

Tj

Junction Temperature

200

℃

Tstg

Storage Temperature Range

-55~+200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

0.87

℃/W

Аналогичный номер детали - MJ11014

производитель	номер детали	датащи	подробное описание детали
Mospec Semiconductor	MJ11014	140Kb / 3P	POWER TRANSISTORS(30A,60-120V,200W)
Motorola, Inc	MJ11014	157Kb / 4P	30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS
ON Semiconductor	MJ11014	157Kb / 4P	DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 1995 REV 1
Wing Shing Computer Com...	MJ11014	20Kb / 1P	NPN SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)
Central Semiconductor C...	MJ11014	54Kb / 1P	Power Transistors

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