2SA1396 datasheet(2/4 Pages) ISC

номер детали	2SA1396

подробное описание детали	Silicon PNP Power Transistors

PDF	4 Pages

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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2 / 4 page

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SA1396

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-emitter sustaining voltage

IC=-5A;IB=-0.5A;L=1mH

-100

VCEsat

Collector-emitter saturation voltage

IC=-5A; IB=-0.5A

-0.6

VBEsat

Base-emitter saturation voltage

IC=-5A; IB=-0.5A

-1.5

ICBO

Collector cut-off current

VCB=-100V; IE=0

-10

μA

ICER

Collector cut-off current

VCE=-100V; RBE=51Ω;

Ta=125℃

-1

ICEX

Collector cut-off current

VCE=-100V;VBE(off)=1.5V

Ta=125℃

-0.01

-1

IEBO

Emitter cut-off current

VEB=-5V; IC=0

-10

μA

hFE-1

DC current gain

IC=-0.5A ; VCE=-5V

200

hFE-2

DC current gain

IC=-3A ; VCE=-5V

200

hFE-3

DC current gain

IC=-5A ; VCE=-5V

Switching times

ton

Turn-on time

0.5

μs

Storage time

1.5

μs

Fall time

IC=-5A ;IB1=-IB2=-0. 5A

VCC≈50V;RL=10Ω

0.5

μs

hFE-2 Classifications

40-80

60-120

100-200

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