2SA649 datasheet(1/3 Pages) ISC

номер детали	2SA649

подробное описание детали	Silicon PNP Power Transistors

PDF	3 Pages

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SA649

DESCRIPTION

·With TO-3 package

·Wide area of safe operation

APPLICATIONS

·For low frequency and large power

switching applications

PINNING(see Fig.2)

DESCRIPTION

1

Base

2

Emitter

3

Collector

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

-150

V

VCEO

Collector-emitter voltage

Open base

-150

V

VEBO

Emitter-base voltage

Open collector

-6

V

IC

Collector current

-7

A

ICM

Collector current-peak

-11

A

PC

Collector power dissipation

TC=25℃

80

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-55~150

℃

Fig.1 simplified outline (TO-3) and symbol

Аналогичный номер детали - 2SA649

производитель	номер детали	датащи	подробное описание детали
Savantic, Inc.	2SA649	109Kb / 3P	Silicon PNP Power Transistors
Savantic, Inc.	2SA649	111Kb / 3P	Silicon NPN Power Transistors
New Jersey Semi-Conduct...	2SA649	124Kb / 2P	Silicon PNP Power Transistor

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Аналогичное описание - 2SA649

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Bourns Electronic Solut...	BD244	106Kb / 5P	PNP SILICON POWER TRANSISTORS
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