2SA814 datasheet(1/3 Pages) ISC

номер детали	2SA814

подробное описание детали	Silicon PNP Power Transistors

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SA814 2SA815

DESCRIPTION

·With TO-220 package

Fig.1 simplified outline (TO-220) and symbol

·Complement to type 2SC1624/1625

·High breakdown voltage

APPLICATIONS

·Medium power amplifier applications

·Driver stage amplifier applications

PINNING

DESCRIPTION

1

Emitter

2

Collector;connected to

mounting base

3

Base

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

2SA814

-120

VCBO

Collector-base voltage

2SA815

Open emitter

-100

V

2SA814

-120

VCEO

Collector-emitter voltage

2SA815

Open base

-100

V

VEBO

Emitter-base voltage

Open collector

-5

V

IC

Collector current

-1

A

IE

Emitter current

1

A

PC

Collector power dissipation

TC=25℃

15

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-55~150

℃

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