MJ10002 datasheet(1/2 Pages) ISC

номер детали	MJ10002

подробное описание детали	isc Silicon NPN Darlington Power Transistor

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Darlington Power Transistor

MJ10002

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= 350V (Min.)

·High Switching Speed

APPLICATIONS

Designed for high voltage, high speed , power switching in

Inductive circuits where fall time is critical. They are partic-

ularly suited for line operated switch-mode applications as:

·Switching Regulators

·Inverters

·Solenoid and Relay Drivers

·Motor Controls

·Deflection Circuits

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCEO(SUS)

Collector-Emitter Voltage

350

V

VCEX(SUS)

Collector-Emitter Voltage

400

V

VCEV

Collector-Emitter Voltage

450

V

VEBO

Emitter-Base Voltage

8

V

IC

Collector Current-Continunous

10

A

ICM

Collector Current-Peak

20

A

IB

B

Base Current-Continunous

2.5

A

IBM

Base Current-Peak

5.0

A

PC

Collector Power Dissipation

@TC=25℃

150

W

Tj

Junction Temperature

200

℃

Tstg

Storage Temperature Range

-65~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

1.17

℃/W

isc Website：www.iscsemi.cn

Аналогичный номер детали - MJ10002

производитель	номер детали	датащи	подробное описание детали
Mospec Semiconductor	MJ10002	183Kb / 4P	POWER TRANSISTORS(10A,350-400V,150W)
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