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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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BDW24 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BDW24 датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDW24/A/B/C DESCRIPTION ·Collector Current -IC= -6A ·High DC Current Gain-hFE= 750(Min)@ IC= -2A ·Complement to Type BDW23/A/B/C APPLICATIONS ·Designed for hammer drivers, audio amplifiers applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDW24 -45 BDW24A -60 BDW24B -80 VCER Collector-Emitter Voltage BDW24C -100 V BDW24 -45 BDW24A -60 BDW24B -80 VCEO Collector-Emitter Voltage BDW24C -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A ICM Collector Current-Peak -8 A IB B Base Current-Continuous -0.2 A PC Collector Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc Website：www.iscsemi.cn |
Аналогичный номер детали - BDW24 |
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Аналогичное описание - BDW24 |
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ссылки URL |
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