BD544 datasheet(2/2 Pages) ISC

номер детали	BD544

подробное описание детали	isc Silicon PNP Power Transistors

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производитель	ISC [Inchange Semiconductor Company Limited]

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistors

BD544/A/B/C

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

BD544

-40

BD544A

-60

BD544B

-80

V(BR)CEO

Collector-Emitter

Breakdown Voltage

BD544C

IC= -30mA ; IB= 0

-100

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= -3A; IB= -0.3A

-0.5

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= -5A; IB= -1A

-0.5

VCE(sat)-3

Collector-Emitter Saturation Voltage

IC= -8A; IB= -1.6A

-1.0

VBE(on)

Base-Emitter On Voltage

IC= -5A; VCE= -4V

-1.4

BD544

VCE= -40V; VBE= 0

-0.4

BD544A

VCE= -60V; VBE= 0

-0.4

BD544B

VCE= -80V; VBE= 0

-0.4

ICES

Collector

Cutoff Current

BD544C

VCE= -100V; VBE= 0

-0.4

BD544/A

VCE= -30V; IB= 0

-0.7

ICEO

Collector

Cutoff Current

BD544B/C

VCE= -60V; IB= 0

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

-1

hFE-1

DC Current Gain

IC= -1A ; VCE= -4V

hFE-2

DC Current Gain

IC= -3A ; VCE= -4V

hFE-3

DC Current Gain

IC= -5A ; VCE= -4V

Switching Times

ton

Turn-On Time

0.4

μs

toff

Turn-Off Time

IC= -6A; IB1= -IB2= -0.6A;

VBE(off)= 4V, RL= 5Ω

0.7

μs

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