MJ1000 datasheet(1/2 Pages) ISC

номер детали	MJ1000

подробное описание детали	isc Silicon NPN Darlington Power Transistor

PDF	2 Pages

Scroll/Zoom	100%

производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

Logo

1 / 2 page

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Darlington Power Transistor

MJ1000

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 60V(Min.)

·High DC Current Gain-

: hFE= 1000(Min.)@IC= 3A

·Low Collector Saturation Voltage-

: VCE (sat)= 2.0V(Max.)@ IC= 3A

APPLICATIONS

·Designed for use as output devices in complementary

general purpose amplifier applications.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

60

V

VCEO

Collector-Emitter Voltage

60

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continunous

10

A

IB

B

Base Current-Continunous

0.1

A

PC

Collector Power Dissipation

@TC=25℃

90

W

Tj

Junction Temperature

200

℃

Tstg

Storage Temperature Range

-55~+200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

1.94

℃/W

isc Website：www.iscsemi.cn

Аналогичный номер детали - MJ1000

производитель	номер детали	датащи	подробное описание детали
Motorola, Inc	MJ1000	139Kb / 4P	Medium-Power Complementary Silicon Transistors
Central Semiconductor C...	MJ1000	54Kb / 1P	Power Transistors
Savantic, Inc.	MJ1000	118Kb / 3P	Silicon NPN Power Transistors
Comset Semiconductor	MJ1000	175Kb / 4P	COMPLEMENTARY POWER DARLINGTONS
Comset Semiconductor	MJ1000	78Kb / 3P	COMPLEMENTARY POWER DARLINGTONS

More results

Аналогичное описание - MJ1000

производитель	номер детали	датащи	подробное описание детали
Inchange Semiconductor ...	2SD560	141Kb / 3P	isc Silicon NPN Darlington Power Transistor
	TIP130	105Kb / 2P	isc Silicon NPN Darlington Power Transistor
	MJ11020	81Kb / 2P	isc Silicon NPN Darlington Power Transistor
	MJ11012	51Kb / 2P	isc Silicon NPN Darlington Power Transistor
	MJ11016	51Kb / 2P	isc Silicon NPN Darlington Power Transistor
	MJ11032	51Kb / 2P	isc Silicon NPN Darlington Power Transistor
	2SD1027	103Kb / 2P	isc Silicon NPN Darlington Power Transistor
	2SD1126	249Kb / 2P	isc Silicon NPN Darlington Power Transistor
	2SD1190	250Kb / 2P	isc Silicon NPN Darlington Power Transistor

More results

MJ1000 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited

MJ1000 датащи(HTML) 1 Page - Inchange Semiconductor Company Limited

Аналогичный номер детали - MJ1000

Аналогичное описание - MJ1000

Html Pages

1 2

датащи скачать

ссылки URL