TIP140 datasheet(1/2 Pages) ISC

номер детали	TIP140

подробное описание детали	isc Silicon NPN Darlington Power Transistor

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Darlington Power Transistor

TIP140

DESCRIPTION

·High DC Current Gain-

: hFE = 1000(Min)@ IC= 5A

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS) = 60V(Min)

·Complement to Type TIP145

APPLICATIONS

·Designed for general purpose amplifier and low

frequency switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

60

V

VCEO

Collector-Emitter Voltage

60

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

10

A

ICM

Collector Current-Peak

15

A

IB

B

Base Current- Continuous

0.5

A

PC

Collector Power Dissipation

@TC=25℃

125

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

1.0

℃/W

Rth j-a

Thermal Resistance,Junction to Ambient

35.7

℃/W

isc Website：www.iscsemi.cn

Аналогичный номер детали - TIP140

производитель	номер детали	датащи	подробное описание детали
Mospec Semiconductor	TIP140	204Kb / 4P	POWER TRANSISTORS(10A,60-100V,125W)
Motorola, Inc	TIP140	234Kb / 6P	10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
ON Semiconductor	TIP140	217Kb / 6P	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 1996 REV 1
Power Innovations Ltd	TIP140	139Kb / 6P	NPN SILICON POWER DARLINGTONS
STMicroelectronics	TIP140	48Kb / 4P	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Mar-2000

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