BU941ZP datasheet(1/2 Pages) ISC

номер детали	BU941ZP

подробное описание детали	isc Silicon NPN Darlington Power Transistor

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Darlington Power Transistor

BU941ZP

DESCRIPTION

·Built In Clamping Zener

·High Operating Junction Temperature

APPLICATIONS

·Designed for use in automotive environment as

electronic ignition power actuators.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCEO

Collector-Emitter Voltage

350

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

15

A

ICM

Collector Current-Peak

30

A

IB

B

Base Current

1

A

IBM

Base Current-Peak

5

A

PC

Collector Power Dissipation

@ TC=25℃

155

W

TJ

Junction Temperature

175

℃

Tstg

Storage Temperature Range

-65~175

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

0.97

℃/W

isc Website：www.iscsemi.cn

Аналогичный номер детали - BU941ZP

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	BU941ZP	84Kb / 8P	HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON Jan-2000
	BU941ZP	496Kb / 9P	HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON TRANSISTORS 03-Feb-2005
	BU941ZP	486Kb / 11P	High voltage ignition coil driver NPN power Darlington transistors 22-Jan-2008
Cystech Electonics Corp...	BU941ZP3	250Kb / 5P	NPN Epitaxial Planar Transistor
STMicroelectronics	BU941ZPFI	84Kb / 8P	HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON Jan-2000

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Аналогичный номер детали - BU941ZP

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