BAS285 datasheet(1/4 Pages) VISHAY

номер детали	BAS285

подробное описание детали	Schottky Barrier Diode

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производитель	VISHAY [Vishay Siliconix]

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BAS285

Vishay Telefunken

Rev. 3, 01-Apr-99

1 (4)

www.vishay.de

• FaxBack +1-408-970-5600

Document Number 85501

Schottky Barrier Diode

Features

D Integrated protection ring against

static discharge

D Very low forward voltage

Applications

Applications where a very low forward voltage is

required

96 12009

Absolute Maximum Ratings

Tj = 25_C

Parameter

Test Conditions

Type

Symbol

Value

Unit

Reverse voltage

VR

30

V

Peak forward surge current

tp = 10 ms

IFSM

5

A

Repetitive peak forward current

tp ≤ 1 s

IFRM

300

mA

Forward current

IF

200

mA

Average forward current

IFAV

200

mA

Junction temperature

Tj

125

°C

Storage temperature range

Tstg

–65...+150

°C

Maximum Thermal Resistance

Tj = 25_C

Parameter

Test Conditions

Symbol

Value

Unit

Junction ambient

on PC board 50mmx50mmx1.6mm

RthJA

320

K/W

Electrical Characteristics

Tj = 25_C

Parameter

Test Conditions

Type

Symbol

Min

Typ

Max

Unit

Forward voltage

IF=0.1mA

VF

240

mV

g

IF=1mA

VF

320

mV

IF=10mA

VF

400

mV

IF=30mA

VF

500

mV

IF=100mA

VF

800

mV

Reverse current

VR=25V, tp=300ms

IR

2.3

mA

Diode capacitance

VR=1V, f=1MHz

CD

10

pF

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Аналогичный номер детали - BAS285

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