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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2SC3518-Z датащи(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SC3518-Z датащи(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page  SMD Type Transistors 1 2.3 0.60+0.1 -0.1 6.50+0.15 -0.15 0.80+0.1 -0.1 4.60+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 0.127 max TO-252 Unit: mm 1 Base 2 Collector 3 Emitter www.kexin.com.cn NPN Silicon Epitaxia 2SC3518-Z Features Low VCE(sat). Fast switching speed. High DC current gain. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 7V Collector current IC 5A Collector current (pulse) *1 ICP 7A Total power dissipation *2 PT 2W Junction temperature Tj 150 Storage temperature Tstg -55to+150 *1 PW 10 ms, duty cycle 50% *2 When mounted on ceramic substrate of 7.5cm 2X0.7mm Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current ICBO VCB = 50V, IE=0 10 ìA Emitter cutoff current IEBO VEB =7V, IC=0 10 ìA VCE =1V , IC = 2A 100 400 VCE =1V , IC =5A 50 Collector-emitter saturation voltage * VCE(sat) IC =2A , IB = 0.2A 0.3 V Base-emitter saturation voltage * VBE(sat) IC =2A , IB = 0.2A 1.2 V Gain bandwidth product fT VCE = 10V , IE = 500mA 120 MHz Turn-on time ton VCC = 10V, RL=5Ù 0.07 1 ìs Storage time tstg IC =2A , 0.8 2.5 ìs Turn-off time toff IB1 =-IB2 = 0.2A 0.12 1 ìs *. PW 350ìs,duty cycle 2% DC current gain * hFE V hFE Classification Marking M L K hFE 100 200 150 300 200 400 |
Аналогичный номер детали - 2SC3518-Z |
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Аналогичное описание - 2SC3518-Z |
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ссылки URL |
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