2SC2712 datasheet(1/3 Pages) KEXIN

номер детали	2SC2712

подробное описание детали	Silicon NPN Epitaxial Type Transistor

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производитель	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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SMD Type

Transistors

1

0.4+0.1

-0.1

2.9+0.1

-0.1

0.95+0.1

-0.1

1.9+0.1

-0.1

1.Base

2.Emitter

3.collector

12

3

Unit: mm

SOT-23

0.1+0.05

-0.01

Silicon NPN Epitaxial Type Transistor

2SC2712

Features

High voltage and high current: VCEO =50V,IC =150 mA (max)

Excellent hFE linearity : hFE (IC =0.1 mA)/ hFE (IC = 2 mA)= 0.95 (typ.)

High hFE:hFE =70

700

Low noise: NF = 1dB (typ.), 10dB (max)

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Collector-base voltage

VCBO

60

V

Collector-emitter voltage

VCEO

50

V

Emitter-base voltage

VEBO

5V

Collector current

IC

150

mA

Base current

IB

30

mA

Collector power dissipation

PC

150

mW

Junction temperature

Tj

125

Storage temperature range

Tstg

-55to+125

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector cut-off current

ICBO

VCB =60V,IE =0

0.1

A

Emitter cut-off current

IEBO

VEB =5V, IC =0

0.1

A

DC current gain

hFE

VCE =6V, IC = 2 mA

70

700

Collector-emitter saturation voltage

VCE (sat) IC = 100 mA, IB = 10 mA

0.1

0.25

V

Collector output capacitance

Cob

VCB = 10V, IE =0,f=1MHz

2

3.5

pF

Noise figure

NF

VCE =6V, IC =0.1 mA ,f=1KHz,

RG=10KÙ

110

dB

Transition frequency

fT

VCE = 10V, IC =1 mA

80

MHz

hFE Classification

Marking

LO

LY

LG

LL

Rank

O

Y

GR

BL

hFE

70

140

120

240

200

400

350

700

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Аналогичный номер детали - 2SC2712

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2SC2712 датащи(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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Аналогичный номер детали - 2SC2712

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