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KI5404BDC датащи(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

номер детали KI5404BDC
подробное описание детали  N-Channel 2.5-V (G-S) MOSFET
PDF  2 Pages
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производитель  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
домашняя страница  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

KI5404BDC датащи(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd

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SMD Type
IC
SMD Type
IC
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Gate Threshold Voltage
VGS(th)
VDS =VGS,ID = 250 ìA
0.6
1.5
V
Gate-Body Leakage
IGSS
VDS =0V, VGS =
12 V
100
nA
VDS =20V, VGS =0V
1
A
VDS =20V, VGS =0V, TJ =85
5
A
On-State Drain Current*
ID(on)
VDS
5V, VGS =4.5 V
20
A
VGS =4.5 V, ID = 5.4 A
0.022
0.028
VGS =2.5 V, ID = 2.6 A
0.031
0.039
Forward Transconductance*
gfs
VDS =10V, ID =5.4 A
26
S
Schottky Diode Forward Voltage*
VSD
IS =1.1 A, VGS =0V
0.7
V
Total Gate Charge
Qg
711
nC
Gate-Source Charge
Qgs
VDS =10V, VGS =4.5 V, ID = 5.4 A
1.7
nC
Gate-Drain Charge
Qgd
2nC
Gate Resistance
Rg
1.7
Turn-On Delay Time
td(on)
12
20
ns
Rise Time
tr
VDD =10V, RL =10
12
20
ns
Turn-Off Delay Time
td(off)
ID =1A, VGEN =4.5V, RG =6
25
40
ns
Fall Time
tf
10
20
ns
Source-Drain Reverse Recovery Time
trr
IF = 1.1 A, di/dt = 100 A/
s
20
40
ns
* Pulse test; pulse width
300
s, duty cycle
2%.
IDSS
Zero Gate Voltage Drain Current
rDS(on)
Drain-Source On-State Resistance*
KI5404BDC



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