2SC4601 datasheet(2/2 Pages) KEXIN

номер детали	2SC4601

подробное описание детали	NPN Triple Diffused Planar Silicon Transistor

PDF	2 Pages

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производитель	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

домашняя страница	http://www.kexin.com.cn/index.asp

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2 / 2 page

SMD Type

Transistors

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Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector cut-off current

ICBO

VCB =800 V, IE =0

ìA

Emitter cut-off current

IEBO

VEB =5V, IC =0

ìA

VCE =5V, IC =0.1A

VCE =5V, IC =0.5A

Gain-Bandwidth product

VCE =10V, IC =0.1A

MHz

Output Capacitance

Cob

VCB=10V,f=1MHz

Collector-emitter saturation voltage

VCE (sat)

IC =0.75A, IB =0.15A

2.0

Base-emitter saturation voltage

VBE (sat)

IC =0.75 A, IB =0.15A

1.5

Collector-base breakdown voltage

V (BR) CBO

IC =1mA, IE = 0

1100

Collector-emitter breakdown voltage

V (BR) CEO

IC = 5 mA,RBE=

800

Emitter-to-Base Breakdown Voltage

V(BR)EBO

IE=1mA,IC=0

Collector-to-Emitter Sustain Voltage

VCEO(SUS)

IC=0.75A,IB1=-IB2=0.15A,L=50mH

800

Turn-ON time

ton

0.5

Storage time

tstg

3.0

Fall time

0.3

DC current gain

ìs

hFE

IC=1A,IB1=0.2A,IB2=-0.4A,RL=400

Ù,VCC=400V

Switching Time Test Circuit

hFE Classification

Rank

hFE

10to20

15to30

20to40

2SC4601

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