2SC3075 datasheet(1/1 Pages) KEXIN

номер детали	2SC3075

подробное описание детали	NPN Silicon Epitaxial Transistor

PDF	1 Pages

Scroll/Zoom	100%

производитель	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

домашняя страница	http://www.kexin.com.cn/index.asp

Logo

1 / 1 page

SMD Type

Transistors

1

2.3

0.60+0.1

-0.1

6.50+0.15

-0.15

0.80+0.1

-0.1

4.60+0.15

-0.15

5.30+0.2

-0.2

2.30+0.1

-0.1

0.50+0.8

-0.7

0.127

max

TO-252

Unit: mm

1 Base

2 Collector

3 Emitter

www.kexin.com.cn

NPN Silicon Epitaxial Transistor

2SC3075

Features

Excellent Switching Times

tr=1.0ìs (Max.) tf=1.5ìs (Max.) at IC=0.5A

High colletor Breakdown Voltage: VCEO=400V

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Collector to base voltage

VCBO

500

V

Collector to emitter voltage

VCEO

400

V

Emitter to base voltage

VEBO

7V

Collector current (DC)

IC

0.8

A

Collector current (Pulse)

Icp

1.5

A

Base Current

IB

0.5

A

Total Power dissipation Ta = 25

1W

TC =25

10

W

Junction temperature

Tj

150

Storage temperature

Tstg

-55to+150

PC

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

collector cutoff current

ICBO

VCB=400V,IE=0

100

ìA

emitter cutoff current

IEBO

VEB=7V,IC=0

100

ìA

Emitter-Base Breakdown Voltage

V(BR)EBO

IE=1mA,IC=0

500

V

Collector-Emitter Breakdown Voltage

V(BR)CEO

IC=10mA,IB=0

400

V

VCE=5V,IC=0.1A

20

100

VCE=5V,IC=0.5A

10

Collector-Emitter Saturation Voltage

VCE(sat)

IC=0.1A,IB=0.01A

0.5

V

Base- Emitter Voltage

VBE(sat)

IC=0.1A,IB=0.01A

1

V

Switching time turn-0n time

tr

1

ìs

Switching storage time

tstg

2.5

ìs

Switching fall time

tf

1.5

ìs

hFE

DC current Gain

Аналогичный номер детали - 2SC3075

производитель	номер детали	датащи	подробное описание детали
Toshiba Semiconductor	2SC3075	208Kb / 4P	TRANSISTOR (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING, HIGH SPEED DC-DC CONVERTER APPLICATIONS)
	2SC3075	170Kb / 5P	Silicon NPN Triple Diffused Type (PCT process) Switching Regulator and High Voltage Switching
	2SC3075	1Mb / 73P	Bipolar Small-Signal Transistors
Inchange Semiconductor ...	2SC3075	294Kb / 2P	Silicon NPN Power Transistor
Inchange Semiconductor ...	2SC3075-251	294Kb / 2P	Silicon NPN Power Transistor

More results

Аналогичное описание - 2SC3075

производитель	номер детали	датащи	подробное описание детали
Samsung semiconductor	2N6516	35Kb / 1P	NPN EPITAXIAL SILICON TRANSISTOR
	BCW33	27Kb / 1P	NPN EPITAXIAL SILICON TRANSISTOR
	BCW60B	34Kb / 1P	NPN EPITAXIAL SILICON TRANSISTOR
	BCX70G	34Kb / 1P	NPN EPITAXIAL SILICON TRANSISTOR
Fairchild Semiconductor	BC237	45Kb / 4P	NPN EPITAXIAL SILICON TRANSISTOR
	BC846	68Kb / 3P	NPN EPITAXIAL SILICON TRANSISTOR
	FJN3301R	69Kb / 4P	NPN Epitaxial Silicon Transistor
	FJN3307R	37Kb / 4P	NPN Epitaxial Silicon Transistor
	FJN3308R	36Kb / 4P	NPN Epitaxial Silicon Transistor
	FJNS3201R	69Kb / 4P	NPN Epitaxial Silicon Transistor

More results

2SC3075 датащи(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

2SC3075 датащи(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Аналогичный номер детали - 2SC3075

Аналогичное описание - 2SC3075

Html Pages

1

датащи скачать

ссылки URL