TC7660SCPA datasheet(2/8 Pages) TELCOM

2 / 8 page

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TELCOM SEMICONDUCTOR, INC.

TC7660S

SUPER CHARGE PUMP DC-TO-DC

VOLTAGE CONVERTER

ELECTRICAL CHARACTERISTICS: TA = +25°C, V+ = 5V, COSC = 0, Test Circuit (Figure 1), unless otherwise

indicated.

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

I+

Supply Current

RL =

∞

—

160

µA

(Boost pin OPEN or GND)

°C ≤ TA ≤ +70°C

—

180

– 40

°C ≤ TA ≤ +85°C

—

180

– 55

°C ≤ TA ≤ +125°C

—

200

I+

Supply Current

°C ≤ TA ≤ +70°C

—

300

µA

(Boost pin = V+)

– 40

°C ≤ TA ≤ +85°C

—

350

– 55

°C ≤ TA ≤ +125°C

—

400

V+

Supply Voltage Range, High

Min

≤ TA ≤ Max,

—

RL = 10 kΩ, LV Open

Supply Voltage Range, Low

Min

≤ TA ≤ Max,

1.5

—

3.5

RL = 10 kΩ, LV to GND

ROUT

Output Source Resistance

IOUT = 20mA

—

100

Ω

IOUT = 20mA, 0°C ≤ TA ≤ +70°C

—

120

IOUT = 20mA, – 40°C ≤ TA ≤ +85°C

—

120

IOUT = 20mA, – 55°C ≤ TA ≤ +125°C

—

105

150

V+ = 2V, IOUT = 3 mA, LV to GND

°C ≤ TA ≤ +70°C

—

250

Ω

– 55

°C ≤ TA ≤ +125°C

—

400

FOSC

Oscillator Frequency

Pin 7 open; Pin 1 open or GND

—

kHz

Boost Pin = V+

—45—

PEFF

Power Efficiency

RL = 5 kΩ; Boost Pin Open

—

TMIN ≤ TA ≤ TMAX; Boost Pin Open

—

Boost Pin = V+

—88—

VOUT EFF

Voltage Conversion Efficiency

RL =

∞

99.9

—

ZOSC

Oscillator Impedance

V+ = 2V

—

Ω

V+ = 5V

—

100

—

Ω

NOTES: 1. Connecting any input terminal to voltages greater than V+ or less than GND may cause destructive latch-up. It is recommended that no

inputs from sources operating from external supplies be applied prior to "power up" of the TC7660S.

2. Derate linearly above 50

°C by 5.5mW/°C.

ABSOLUTE MAXIMUM RATINGS*

Supply Voltage ......................................................... +13V

LV, Boost, OSC Inputs

Voltage (Note 1) ......................... – 0.3V to (V+ +0.3V)

for V+ <5.5V

(V+ – 5.5V) to (V+ +0.3V)

for V+ >5.5V

Current Into LV (Note 1) ....................... 20

µA for V+ >3.5V

Output Short Duration (VSUPPLY ≤ 5.5V) ......... Continuous

Power Dissipation (TA ≤ 70°C) (Note 2)

CerDIP ............................................................ 800mW

Plastic DIP ...................................................... 730mW

SOIC ............................................................... 470mW

Operating Temperature Range

C Suffix .................................................. 0

°C to +70°C

E Suffix ............................................. – 40

°C to +85°C

M Suffix ........................................... – 55

°C to +125°C

Storage Temperature Range ................ – 65

°C to +150°C

Lead Temperature (Soldering, 10 sec) ................. +300

°C

*Static-sensitive device. Unused devices must be stored in conductive

material. Protect devices from static discharge and static fields. Stresses

above those listed under "Absolute Maximum Ratings" may cause perma-

nent damage to the device. These are stress ratings only and functional

operation of the device at these or any other conditions above those

indicated in the operation sections of the specifications is not implied.

Exposure to absolute maximum rating conditions for extended periods may

affect device reliability.

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