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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2SA1898 датащи(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SA1898 датащи(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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2 / 2 page  www.kexin.com.cn 2 SMD Type IC SMD Type Transistors Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current IcBO VCB = -12V , IE =0 -1 nA Emitter cutoff current IEBO VEB =-3V , IC =0 -1 nA DC current Gain hFE VCE =-2V , IC = -0.5A 100 280 Gain bandwidth product fT VCE =-2V , IC = -0.3A 300 MHz Common base output capacitance Cob VCB = -10V , f = 1MHz 28 pF Collector-to-emitter saturation voltage VCE(sat) IC = -1.5A , IB =-75mA -0.25 -0.5 mV Base-to-emitter saturation voltage VBE(sat) IC = -1.5A , IB =-75mA -0.95 -1.2 V Collector-to-base breakdown voltage V(BR)CBO IC = -10ìA , IE =0 -15 V Collector-to-emitter breakdown voltage V(BR)CEO IC =-1mA , RBE = -15 V Emitter-to-base breakdown voltage V(BR)EBO IE = -10ìA , IC =0 -5 V Turn-on time ton 30 60 ns Storage time tstg 100 200 ns Turn-off time toff 120 220 ns 2SA1898 hFE Classification Marking Rank R S hFE 100 200 140 280 AN |
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