TC4432 datasheet(2/4 Pages) TELCOM

2 / 4 page

4-258

TELCOM SEMICONDUCTOR, INC.

1.5A HIGH-SPEED 30V MOSFET DRIVERS

TC4431

ELECTRICAL CHARACTERISTICS: TA = +25°C with 5.0 ≤ VDD ≤ 30V, unless otherwise specified.

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

Input

VIH

Logic 1 High Input Voltage

2.4

—

VIL

Logic 0 Low Input Voltage

—

0.8

IIN

Input Current (Note 1)

≤ V

DD (16V MAX)

–1

—

µA

Output

VOH

High Output Voltage

IOUT = 100mA

VDD – 1.0

VDD – 0.8

—

VOL

Low Output Voltage

—

0.025

Output Resistance (VOL)VDD = 30V, IO = 10mA

—

Ω

IPK

Peak Output Current

Source: VDD = 30V

—

3.0

—

Sink: VDD = 30V

—

1.5

—

IREV

Latch-Up Protection

Duty Cycle

≤ 2%

0.3

—

Withstand Reverse Current

≤ 300 µsec

Switching Time (Note 2)

Rise Time

Figure 1

—

nsec

Fall Time

Figure 1

—

nsec

tD1

Delay Time

Figure 1

—

nsec

tD2

Delay Time

Figure 1

—

nsec

Power Supply

Power Supply Current

VIN = 3V

—

2.5

VIN = 0V

—

0.3

0.4

Start-up Threshold

—

8.4

VDO

Drop-out Threshold

(Note 3)

7.7

—

ABSOLUTE MAXIMUM RATINGS*

Supply Voltage ............................................................36V

Input Voltage (Note 1) ........................ VDD + 0.3V to GND

Maximum Chip Temperature ................................. +150

°C

Storage Temperature Range ................ – 65

°C to +150°C

Lead Temperature (Soldering, 10 sec) ................. +300

°C

Package Thermal Resistance

CerDIP RθJ-A ................................................ 150°C/W

CerDIP RθJ-C .................................................. 50°C/W

PDIP RθJ-A ................................................... 125°C/W

PDIP RθJ-C ..................................................... 42°C/W

SOIC RθJ-A ................................................... 250°C/W

SOIC RθJ-C ..................................................... 75°C/W

*Static-sensitive device. Unused devices must be stored in conductive

material. Protect devices from static discharge and static fields. Stresses

above those listed under "Absolute Maximum Ratings" may cause perma-

nent damage to the device. These are stress ratings only and functional

operation of the device at these or any other conditions above those

indicated in the operation sections of the specifications is not implied.

Exposure to absolute maximum rating conditions for extended periods may

affect device reliability.

Operating Temperature Range

C Version ............................................... 0

°C to +70°C

E Version ........................................... - 40

°C to +85°C

Package Power Dissipation (TA ≤ 70°C )

Plastic ............................................................. 730mW

CerDIP ............................................................ 800mW

SOIC ............................................................... 470mW

TC4432 датащи(PDF) 2 Page - TelCom Semiconductor, Inc

TC4432 датащи(HTML) 2 Page - TelCom Semiconductor, Inc

Html Pages

1 2 3 4

датащи скачать

ссылки URL