2SC4667 datasheet(1/1 Pages) KEXIN

номер детали	2SC4667

подробное описание детали	Silicon NPN Epitaxial

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производитель	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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SMD Type

IC

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SMD Type

Transistors

1 Emitter

2 Base

3 Collector

Silicon NPN Epitaxial

2SC4667

Features

High transition frequency: fT = 400 MHz (typ.)

Low saturation voltage: VCE (sat) =0.3 V (max)

High speed switching time: tstg =15ns (typ.)

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Collector-base voltage

VCBO

40

V

Collector-emitter voltage

VCEO

15

V

Emitter-base voltage

VEBO

5V

Collector current

IC

200

mA

Base current

IB

40

mA

Collector power dissipation

PC

100

mW

Junction temperature

Tj

125

Storage temperature

Tstg

-55to+125

hFE Classification

Marking

Rank

R

O

Y

hFE

40

80

70

140

120

240

CH

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector cut-off current

ICBO

VCB =40V, IE =0

0.1

ìA

Emitter cut-off current

IEBO

VEB =5V, IC =0

0.1

ìA

DC current gain

hFE

VCE =1V, IC = 10 mA

40

240

Collector-emitter saturation voltage

VCE (sat) IC =20mA, IB =1mA

0.3

V

Base-emitter saturation voltage

VBE (sat) IC =20mA, IB =1mA

1.0

V

Transition frequency

fT

VCE =10V, IC = 10 mA

200

400

MHz

Collector output capacitance

Cob

VCB =10V, IE = 0,f= 1 MHz

4

6

pF

Turn-on time

ton

70

ns

Storage time

tstg

15

ns

Fall time

tf

30

ns

Аналогичный номер детали - 2SC4667

производитель	номер детали	датащи	подробное описание детали
Toshiba Semiconductor	2SC4667	172Kb / 4P	NPN EPITAXIAL TYPE (ULTRA HIGH SPEED SWITCHING, COMPUTER, COUNTER APPLICATIONS)
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Аналогичное описание - 2SC4667

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2SC4667 датащи(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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Аналогичный номер детали - 2SC4667

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