2SC4249 datasheet(1/1 Pages) KEXIN

номер детали	2SC4249

подробное описание детали	Silicon NPN Epitaxial

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производитель	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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SMD Type

IC

www.kexin.com.cn

1

SMD Type

Transistors

1 Emitter

2 Base

3 Collector

Silicon NPN Epitaxial

2SC4249

Features

High gain: Gpe = 24dB (typ.) (f = 200 MHz)

Low noise: NF = 2.0dB (typ.) (f = 200 MHz)

Excellent forward AGC characteristics

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Collector-base voltage

VCBO

30

V

Collector-emitter voltage

VCEO

30

V

Emitter-base voltage

VEBO

3V

Collector current

IC

20

mA

Base current

IB

10

mA

Collector power dissipation

PC

100

mW

Junction temperature

Tj

125

Storage temperature

Tstg

-55to+125

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector cut-off current

ICBO

VCB =25V, IE = 0

100

nA

Emitter cut-off current

IEBO

VEB =2V, IC = 0

100

nA

Collector-emitter breakdown voltage

V(BR)CEO IC =1mA, IB =0

30

V

DC current gain

hFE

VCE =10V, IC = 2 mA

60

150

300

Reverse transfer capacitance

Cre

VCB = 10 V, IE = 0, f = 1 MHz

0.35

0.5

pF

Transition frequency

fT

VCE =10V, IC = 2 mA

400

650

MHz

Power gain

Gpe

20

24

28

dB

Noise figure

NF

2.0

3.2

dB

AGC voltage

VAGC

VCC =12V, GR = 30dB, f = 200 MHz

3.6

4.4

5.1

V

VCC =12V, VAGC = 1.4 V,f = 200 MHz

Marking

HD

Аналогичный номер детали - 2SC4249

производитель	номер детали	датащи	подробное описание детали
Toshiba Semiconductor	2SC4249	176Kb / 4P	NPN EPITAXIAL PLANAR TYPE (TV VHF RF AMPLIFIER APPLICATIONS)
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Аналогичное описание - 2SC4249

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Аналогичный номер детали - 2SC4249

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