KI2307BDS datasheet(2/2 Pages) KEXIN

номер детали	KI2307BDS

подробное описание детали	P-Channel 30-V (D-S) MOSFET

PDF	2 Pages

Scroll/Zoom	100%

производитель	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

домашняя страница	http://www.kexin.com.cn/index.asp

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SMD Type

Transistors

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

V(BR)DSS VGS =0V, ID =-10

-30

Gate Threshold Voltage

VGS(th)

VDS =VGS,ID = -250 ìA

-1.0

-3.0

Gate-Body Leakage

IGSS

VDS =0V, VGS =

20 V

100

VDS =-30 V, VGS =0V

-1

VDS =-30 V, VGS =0V, TJ =55

-10

On-State Drain Current

ID(on)

VDS

-10 V, VGS =-10 V

-6

VGS =-10 V, ID = -3.2 A

0.063

0.078

VGS =-4.5V, ID = -2.5 A

0.105

0.130

Forward Transconductance *

gfs

VDS =-10 V, ID = -3.2 A

5.0

Diode Forward Voltage *

VSD

IS = -0.75A, VGS = 0 V

-0.85

-1.2

Total Gate Charge

9.0

Gate-Source Charge

Qgs

1.4

Gate-Drain Charge

Qgd

2.4

Gate Resistance

f= 1.0 MHz

Input Capacitance

Ciss

380

Output Capacitance

Coss

100

Reverse Transfer Capacitance

Crss

td(on)

920

td(off)

* Pulse test: PW

300 ìs duty cycle

2%.

rDS(on)

Drain-Source On-State Resistance *

VDS = -15V ,VGS =0, f =1MHz

VDD = -15V , RL =15

ID =-1A , VGEN =- 4.5V , RG =6

Turn-Off Time

Turn-On Time

Zero Gate Voltage Drain Current

IDSS

VDS = -15V ,VGS =-10 V , ID=-1.7A

KI2307BDS

Marking

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