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2SC945 датащи(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SC945 датащи(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 2 page ![]() 1 SMD Type Diodes SMD Type Transistors www.kexin.com.cn 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 1.Base 2.Emitter 3.collector 1 2 3 Unit: mm SOT-23 0.1 +0.05 -0.01 NPN Silicon Transistor 2SC945 ■ Features ● Collector current up to 150mA ● High hFE linearity ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 5 V Collector current (DC) IC 150 mA power dissipation PC 200 mW Junction temperature Tj 150 ℃ Storage temperature range Tstg -55 to +150 ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100 μA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA , IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=100 μA, IC=0 5 V Collector cutoff current ICBO VCB = 60V, IE = 0 0.1 μA Emitter cutoff current IEBO VEB = 5.0 V, IC = 0 0.1 μA VCE = 6.0V, IC =1.0mA 130 400 VCE = 6.0V, IC =0.1mA 40 Collector saturation voltage VCE(sat) IC=100mA,IB=10mA 0.3 V Base saturation voltage VBE(sat) IC=100mA,IB=10mA 1.0 V Collector to base capacitance Cob VCB = 10 V, IE = 0 , f = 1 MHz 3.0 pF Noise figure NF VCE=6V,IC=0.1mA,Rg=10kΩ,f=1kMHZ 4 10 dB Transition frequency fT VCE=6V,IC=10mA,f =30 MHz 150 MHz DC current gain hFE |
Аналогичный номер детали - 2SC945 |
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