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2SC945 датащи(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

номер детали 2SC945
подробное описание детали  2SC945
PDF  2 Pages
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производитель  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
домашняя страница  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SC945 датащи(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  2SC945 Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd 2SC945 Datasheet HTML 2Page - Guangdong Kexin Industrial Co.,Ltd  
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1
SMD Type
Diodes
SMD Type
Transistors
www.kexin.com.cn
0.4
+0.1
-0.1
2.9
+0.1
-0.1
0.95
+0.1
-0.1
1.9
+0.1
-0.1
1.Base
2.Emitter
3.collector
1
2
3
Unit: mm
SOT-23
0.1
+0.05
-0.01
NPN Silicon Transistor
2SC945
■ Features
● Collector current up to 150mA
● High hFE linearity
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector to base voltage
VCBO
60
V
Collector to emitter voltage
VCEO
50
V
Emitter to base voltage
VEBO
5
V
Collector current (DC)
IC
150
mA
power dissipation
PC
200
mW
Junction temperature
Tj
150
Storage temperature range
Tstg
-55 to +150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=100 μA, IE=0
60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA , IB=0
50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100 μA, IC=0
5
V
Collector cutoff current
ICBO
VCB = 60V, IE = 0
0.1
μA
Emitter cutoff current
IEBO
VEB = 5.0 V, IC = 0
0.1
μA
VCE = 6.0V, IC =1.0mA
130
400
VCE = 6.0V, IC =0.1mA
40
Collector saturation voltage
VCE(sat)
IC=100mA,IB=10mA
0.3
V
Base saturation voltage
VBE(sat)
IC=100mA,IB=10mA
1.0
V
Collector to base capacitance
Cob
VCB = 10 V, IE = 0 , f = 1 MHz
3.0
pF
Noise figure
NF
VCE=6V,IC=0.1mA,Rg=10kΩ,f=1kMHZ
4
10
dB
Transition frequency
fT
VCE=6V,IC=10mA,f =30 MHz
150
MHz
DC current gain
hFE


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