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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2SC4412 датащи(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SC4412 датащи(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page  SMD Type Transistors 1 www.kexin.com.cn 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector 12 3 Unit: mm SOT-23 0.1+0.05 -0.01 NPN Triple Diffused Planar Silicon Transistor 2SC4412 Features High breakdown voltage. Small reverse transfer capacitance and excellent high frequency characteristic(Cre : 1.0pF typ). Excellent DC current gain ratio(hFE ratio : 0.95 typ). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 300 V Collector-emitter voltage VCEO 300 V Emitter-base voltage VEBO 5V Collector current IC 50 mA Collector current (pulse) ICP 100 mA Collector dissipation PC 250 mW Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current IcBO VCB =200V , IE =0 0.1 ìA Emitter cutoff current IEBO VEB =4V , IC =0 0.1 ìA VCE =6V , IC = 0.1 mA 100 320 VCE =6V , IC =1 mA 100 Gain bandwidth product fT VCE =30V , IC =10mA 70 MHz Output capacitance Cob VCB = 30V , f = 1MHz 1.5 pF Reverse transfer capacitance Cre VCB = 30V , f = 1MHz 1.0 pF DC current gain ratio hFE ratio hFE1/ hFE20.95 Collector-emitter saturation voltage VCE(sat) IC =10mA , IB =1mA 1.0 V Base-emitter saturation voltage VBE(sat) IC =10mA , IB =1mA 1.0 V Collector-to-base breakdown voltage V(BR)CBO IC =10ìA , IE =0 300 V Collector-to-emitter breakdown voltage V(BR)CEO IC =1mA , RBE = 300 V Emitter-base breakdown voltage V(BR)EBO IE =10ìA , IC =0 5 V DC current Gain hFE hFE Classification Marking Rank 4 5 hFE 100 200 160 320 QT |
Аналогичный номер детали - 2SC4412 |
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Аналогичное описание - 2SC4412 |
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ссылки URL |
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