BCW65 datasheet(2/2 Pages) KEXIN

номер детали	BCW65

подробное описание детали	NPN General Purpose Transistors

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производитель	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

домашняя страница	http://www.kexin.com.cn/index.asp

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SMD Type

Transistors

BCW65,BCW66

hFE Classification

TYPE

Rank

Marking

EAs

EBs

ECs

TYPE

Rank

Marking

EFs

EGs

EHs

BCW65

BCW66

Electrical Characteristics Ta = 25

Symbol

Testconditons

Min

Typ

Max

Unit

BCW65

BCW66

BCW65

BCW66

V(BR)EBO IE =10ìA, IC =0

BCW65

VCB =32V, IE =0

BCW66

VCB =45V, IE =0

BCW65

VCB =32V, IE =0, TA = 150

BCW66

VCB =45V, IE =0, TA = 150

IEBO

VEB =4V, IC =0

A/F

B/G

C/H

A/F

B/G

110

C/H

180

A/F

100

160

250

B/G

160

250

400

C/H

250

350

630

IC = 100 mA, IB =10mA

0.3

IC = 500 mA, IB =50mA

0.7

IC = 100 mA, IB =10mA

1.25

IC = 500 mA, IB =50mA

IC =50mA, VCE = 5 V, f = 100 MHz

170

MHz

Ccb

VCB = 10 V,f= 1 MHz

Ceb

VEB = 0.5 V,f= 1 MHz

* Pulse test: t

300ìs, D = 2%.

IC = 100 ìA, VCE =10V

IC =10mA, VCE =1V

hFE

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

DC current gain *

hFE-grp.

Emitter cutoff current

DC current gain *

hFE-grp.

DC current gain *

hFE-grp.

ìA

V(BR)CEO IC =10mA, IB =0

V(BR)CBO IC =10ìA, IE =0

hFE

IC = 100 mA, VCE =1V

Collector-emitter saturation voltage *

VCE(sat)

Emitter-base capacitance

Emitter-base breakdown voltage

ICBO

Collector cutoff current

Base-emitter saturation voltage

VBE(sat)

Transition frequency

Collector-base capacitance

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