MMBT3904W datasheet(2/2 Pages) KEXIN

2 / 2 page

www.kexin.com.cn

SMD Type

Transistors

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector-emitter breakdown voltage

V(BR)CEO

IC =1.0 mA, IB =0

Collector-base breakdown voltage

V(BR)CBO

IC =10ìA, IE =0

Emitter-base breakdown voltage

V(BR)EBO

IE =10ìA, IC =0

Base cutoff current

IBL

VCE =30V, VEB =3.0 V

Collector cutoff current

ICEX

VCE =30V, VEB =3.0 V

DC current gain *

HFE

IC =0.1 mA, VCE =1.0 V

IC =1.0 mA, VCE =1.0 V

IC =10mA, VCE =1.0 V

IC =50mA, VCE =1.0 V

IC = 100 mA, VCE =1.0 V

100

300

IC =10mA, IB =1.0 mA

0.2

IC =50mA, IB =5.0 mA

0.3

IC =10mA, IB =1.0 mA

0.65

0.85

IC =50mA, IB = 5.0 mA

0.95

Current-gain-bandwidth product

IC =10mA, VCE = 20 V, f = 100 MHz

300

MHz

Output capacitance

Cobo

VCB =5.0 V, IE = 0,f= 1.0 MHz

Input capacitance

Cibo

VEB =0.5 V, IC = 0,f= 1.0 MHz

Input impedance

hie

VCE =10V, IC = 1.0 mA, f = 1.0 kHz

1.0

kÙ

Voltage feedback ratio

hre

VCE =10V, IC = 1.0 mA, f = 1.0 kHz

0.5

8.0

X10

-4

Small-signal current gain

hfe

VCE =10V, IC = 1.0 mA, f = 1.0 kHz

100

400

Output admittance

hoe

VCE =10V, IC = 1.0 mA, f = 1.0 kHz

1.0

ìmhos

Noise figure

VCE =5.0 V, IC = 100 ìA, RS =1.0 kÙ, f

=1.0 kHz

5dB

Delay time

VCC = 3.0 V, V = - 0.5 V

Rise time

IC =10mA, IB1 = 1.0 mA

Storage time

VCC =3.0 V, IC = 10 mA

200

Fall time

IB1 =IB2 = 1.0 mA

* Pulse test: pulse width

300 ìs, duty cycle

2.0%.

Collector-emitter saturation voltage *

Base-emitter saturation voltage *

VCE(sat)

VBE(sat)

MMBT3904W

Marking

MMBT3904W датащи(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

MMBT3904W датащи(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd

Html Pages

1 2

датащи скачать

ссылки URL