2SA1813 datasheet(1/1 Pages) KEXIN

номер детали	2SA1813

подробное описание детали	PNP Epitaxial Planar Silicon Transistors

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производитель	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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SMD Type

IC

www.kexin.com.cn

1

SMD Type

Transistors

PNP Epitaxial Planar Silicon Transistors

2SA1813

Features

Very small-sized package.

Adoption of FBET process.

High DC current gain (hFE=500 to 1200).

Low collector-to-emitter saturation voltage

(VCE(sat)

0.3V).

High VEBO (VEBO

15V).

1 Emitter

2 Base

3 Collector

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Collector-base voltage

VCBO

-30

V

Collector-emitter voltage

VCEO

-25

V

Emitter-base voltage

VEBO

-15

V

Collector current

IC

-150

mA

Collector current (pulse)

ICP

-300

mA

Base current

IB

-30

mA

Collector dissipation

PC

200

mW

Jumction temperature

Tj

150

Storage temperature

Tstg

-55to+150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector cutoff current

IcBO

VCB = -20V , IE =0

-0.1

ìA

Emitter cutoff current

IEBO

VEB = -10V , IC =0

-0.1

ìA

DC current Gain

hFE

VCE =-5V , IC = -1mA

500

800

1200

Gain bandwidth product

fT

VCE = -10V , IC = -10mA

210

MHz

Common base output capacitance

Cob

VCB = -10V , f = 1MHz

2.6

pF

Collector-to-emitter saturation voltage

VCE(sat)

IC = -50mA , IB =-1mA

-0.15

-0.3

mV

Base-to-emitter saturation voltage

VBE(sat)

IC = -50mA , IB =-1mA

-0.78

-1.1

V

Collector-to-base breakdown voltage

V(BR)CBO IC = -10ìA , IE =0

-30

V

Collector-to-emitter breakdown voltage

V(BR)CEO

IC =-1mA , RBE =

-25

V

Emitter-to-base breakdown voltage

V(BR)EBO

IE = -10ìA , IC =0

-15

V

Marking

KS

Аналогичный номер детали - 2SA1813

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