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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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MMBT5550 датащи(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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MMBT5550 датащи(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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2 / 2 page  2 SMD Type Transistors www.kexin.com.cn MMBT5550 Marking Marking M1F Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector?emitter breakdown voltage * V(BR)CEO IC =1.0 mA, IB = 0 140 V Collector?base breakdown voltage V(BR)CBO IC = 100 ìA, IE = 0 160 V Emitter ?base breakdown voltage V(BR)EBO IE =10ìA, IC =0 6 V VCB = 100 V, IE = 0 100 nA VCB = 100 V, IE = 0, Ta = 100 100 ìA Emitter cutoff current IEBO VEB =4.0 V, IC = 0 50 nA IC =1.0 mA, VCE =5V 60 IC =10mA, VCE = 5 V 60 250 IC =50mA, VCE =5V 20 IC =10mA, IB = 1.0 mA 0.15 V IC =50mA, IB = 5.0 mA 0.25 V IC =10mA, IB =1.0 mA 1.0 V IC =50mA, IB =5.0 mA 1.2 V VCB = 10 V 50 nA VCB = 75 V 100 nA * Pulse Test: Pulse Width = 300 ìs, Duty Cycle=2.0%. VCE(sat) VBE(sat) ICES Collector emitter cut-off Base-emitter saturation voltage Collector-emitter saturation voltage ICBO Collector cutoff current hFE DC current gain |
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