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TP0606 датащи(PDF) 2 Page - Supertex, Inc

номер детали TP0606
подробное описание детали  P-Channel Enhancement-Mode Vertical DMOS FETs
PDF  4 Pages
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производитель  SUTEX [Supertex, Inc]
домашняя страница  http://www.supertex.com
Logo SUTEX - Supertex, Inc

TP0606 датащи(HTML) 2 Page - Supertex, Inc

  TP0606 Datasheet HTML 1Page - Supertex, Inc TP0606 Datasheet HTML 2Page - Supertex, Inc TP0606 Datasheet HTML 3Page - Supertex, Inc TP0606 Datasheet HTML 4Page - Supertex, Inc  
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2
Package
I
D (continuous)*
I
D (pulsed)
Power Dissipation
θjc
θja
I
DR*IDRM
@ TC = 25°C
°C/W
°C/W
TO-92
0.32A
-3.5A
1W
125
170
0.32A
-3.5A
* I
D (continuous) is limited by max rated Tj.
TP0606
Thermal Characteristics
Switching Waveforms and Test Circuit
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
-60
V
GS(th)
Gate Threshold Voltage
-1.0
-2.4
V
V
GS = VDS, ID = -1.0mA
∆VGS(th)
Change in V
GS(th) with Temperature
-5.0
mV/°CVGS = VDS, ID = -1.0mA
I
GSS
Gate Body Leakage
-100
nA
V
GS = ±20V, VDS = 0V
I
DSS
Zero Gate Voltage Drain Current
-10
µAVGS = 0V, VDS = Max Rating
-1.0
mA
V
GS = 0V, VDS = 0.8 Max Rating
TA = 125°C
ID(ON)
ON-State Drain Current
-0.4
-0.6
VGS = -5V, VDS = -25V
-1.5
-2.5
VGS = -10V, VDS = -25V
RDS(ON)
5.0
7.0
VGS = -5V, ID = -250mA
3.0
3.5
VGS = -10V, ID = -0.75A
∆RDS(ON)
Change in RDS(ON) with Temperature
1.7
%/°CVGS = -10V, ID = -0.75A
GFS
Forward Transconductance
300
400
m
VDS = -25V, ID = -0.75A
CISS
Input Capacitance
80
150
C
OSS
Common Source Output Capacitance
50
85
pF
C
RSS
Reverse Transfer Capacitance
15
35
t
d(ON)
Turn-ON Delay Time
10
t
r
Rise Time
15
t
d(OFF)
Turn-OFF Delay Time
20
t
f
Fall Time
15
V
SD
Diode Forward Voltage Drop
-1.8
V
V
GS = 0V, ISD = -1.0A
t
rr
Reverse Recovery Time
300
ns
V
GS = 0V, ISD = -1.0A
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
A
V
GS = 0V, VDS = -25V
f = 1 MHz
V
DD = -25V
ns
I
D = -1.0A
RGEN = 25Ω
VV
GS = 0V, ID = -2.0mA
Drain-to-Source Breakdown Voltage
Static Drain-to-Source
ON-State Resistance



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