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THBTGFR5210-CE датащи(PDF) 5 Page - Seoul Semiconductor |
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THBTGFR5210-CE датащи(HTML) 5 Page - Seoul Semiconductor |
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5 / 15 page ![]() Document No. : SSC-QP-7-07-24 (Rev.00) Rev. 00 Rev. 00 September 2008 September 2008 www.ZLED.com www.ZLED.com ♦ Zener Diode의 전기적 특성 ㎂ 1.0 - - V R=5V I R V 1.6 - - I F=10㎃ V F Unit Max Typ Min 조건 항목 *2 The luminous intensity IV is measured at the peak of the spatial pattern which may not be aligned with the mechanical axis of the LED package. *3 θ1/2 is the off-axis where the luminous intensity is 1/2 the peak intensity. [Note] All products confirm to the listed minimum and maximum specifications for electric and optical characteristics, when operated at 20mA within the maximum ratings shown above. All measurements were made under the standardized environment of SSC. (Tolerance : Iv ±10 %, λD ±2 nm, VF ±0.1 V) |
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