2

90%

10%

90%

90%

10%

10%

PULSE

GENERATOR

V

DD

R

L

OUTPUT

D.U.T.

t

(ON)

t

d(ON)

t

(OFF)

t

d(OFF)

t

F

t

r

INPUT

INPUT

OUTPUT

0V

V

DD

R

gen

0V

-10V

Symbol

Parameter

Min

Typ

Max

Unit

Conditions

Drain-to-Source

300

V

Breakdown Voltage

Gate-to-Source OFF Voltage

–1.0

–3.5

V

4.5

Gate Body Leakage Current

100

nA

Drain-to-Source Leakage Current

10

1mA

Saturated Drain-to-Source Current

200

mA

Static Drain-to-Source

12

Ω

ON-State Resistance

1.1

Forward Transconductance

300

m

Input Capacitance

300

Common Source Output Capacitance

30

pF

f = 1 MHz

Reverse Transfer Capacitance

5

Turn-ON Delay Time

10

Rise Time

15

ns

Turn-OFF Delay Time

15

Fall Time

20

Diode Forward Voltage Drop

1.8

V

Reverse Recovery Time

600

ns

Notes:

1.

All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2.

All A.C. parameters sample tested.

Package

Power Dissipation

θ

θθ

θ

θθ

TO-92

175mA

500mA

0.74W

125

170

175mA

500mA

TO-243AA

200mA

500mA

15

200mA

500mA

DN2530

Thermal Characteristics

Switching Waveforms and Test Circuit