7-10

2N7002

Package

I

I

Power Dissipation

θ

jc

θ

ja

I

TO-236AB

115mA

800mA

0.36W

200

350

115mA

800mA

Thermal Characteristics

Symbol

Parameter

Min

Typ

Max

Unit

Conditions

Drain-to-Source Breakdown Voltage

60

V

Gate Threshold Voltage

1.0

2.5

V

∆V

GS(th)

-5.5

mV/

°CI

Gate Body Leakage

±100

nA

Zero Gate Voltage Drain Current

1

µAV

500

µAV

T

I

D(ON)

ON-State Drain Current

500

mA

V

R

DS(ON)

7.5

Ω

V

7.5

Ω

V

∆R

DS(ON)

Change in R

1.0

%/

°CV

G

FS

Forward Transconductance

80

m

V

C

ISS

Input Capacitance

50

C

OSS

Common Source Output Capacitance

25

pF

V

C

RSS

Reverse Transfer Capacitance

5

t

(ON)

Turn-ON Time

20

ns

t

(OFF)

Turn-OFF Time

20

V

SD

Diode Forward Voltage Drop

1.2

V

I

t

rr

Reverse Recovery Time

400

ns

I

Notes:

1. All D.C. parameters 100% tested at 25

°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2. All A.C. parameters sample tested.

°C unless otherwise specified)

Static Drain-to-Source

ON-State Resistance

V

Switching Waveforms and Test Circuit

90%

10%

90%

90%

10%

10%

PULSE

GENERATOR

V

DD

R

L

OUTPUT

D.U.T.

t

(ON)

t

d(ON)

t

(OFF)

t

d(OFF)

t

F

t

r

INPUT

INPUT

OUTPUT

10V

V

DD

R

gen

0V

0V