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AM101-DP датащи(PDF) 4 Page - Seoul Semiconductor

номер детали AM101-DP
подробное описание детали  Surface-mounted chip LED device
PDF  13 Pages
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производитель  SEOUL [Seoul Semiconductor]
домашняя страница  http://www.seoulsemicon.com
Logo SEOUL - Seoul Semiconductor

AM101-DP датащи(HTML) 4 Page - Seoul Semiconductor

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Document No. : SSC-QP-7-07-24 (Rev.00)
Rev. 00
Rev. 00
September 2008
September 2008
www.ZLED.com
www.ZLED.com
1. Absolute maximum ratings
2. Electro-Optical Characteristics
℃
-40 ~ 100
T
stg.
Storage Temperature
V
5
V
R
Reverse Voltage
mW
65
P
d
Power Dissipation
℃
-30 ~ 85
T
opr.
Operation Temperature
mA
50
I
FM
*1
Peak Forward Current
mA
30
I
F
Forward Current
Unit
Value
Symbol
Parameter
(Ta=25℃)
*1 IFM conditions: Pulse width Tw≤0.1ms and Duty ratio≤1/10.
nm
I
F=20 ㎃
Spectral Bandwidth
-
30
-
Δλ
-
600
80
-
1.9
Min
-
615
-
10
2.3
Max
120
606
120
-
2.0
Typ
˚
I
F=20 ㎃
2θ
1/2
Viewing Angle*3
V
I
F=20 ㎃
V
F
Forward Voltage
nm
I
F=20 ㎃
λ
d
Wavelength
mcd
I
F=20 ㎃
I
V
Luminous Intensity*2
㎂
V
R=5V
I
R
Reverse Current
Unit
Condition
Symbol
Parameter-
(Ta=25℃)
*2 The luminous intensity IV is measured at the peak of the spatial pattern which may not be aligned with the mechanical axis of the
LED package.
*3 θ1/2 is the off-axis where the luminous intensity is 1/2 the peak intensity.
[Note] All products confirm to the listed minimum and maximum specifications for electric and optical characteristics, when operated at
20mA within the maximum ratings shown above. All measurements were made under the standardized environment of SSC.
(Tolerance : Iv ±10 %, λD ±2 nm, VF ±0.1 V)



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