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IRF830FP датащи(PDF) 2 Page - Suntac Electronic Corp.

номер детали IRF830FP
подробное описание детали  POWER MOSFET
PDF  4 Pages
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производитель  SUNTAC [Suntac Electronic Corp.]
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IRF830FP датащи(HTML) 2 Page - Suntac Electronic Corp.

  IRF830FP Datasheet HTML 1Page - Suntac Electronic Corp. IRF830FP Datasheet HTML 2Page - Suntac Electronic Corp. IRF830FP Datasheet HTML 3Page - Suntac Electronic Corp. IRF830FP Datasheet HTML 4Page - Suntac Electronic Corp.  
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IRF830
POWER MOSFET
P
Page 2
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25
.
CIRF830
Characteristic
Symbol
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
(VGS = 0 V, ID = 250
A)
V(BR)DSS
500
V
Drain-Source Leakage Current
(VDS = 500V, VGS = 0 V)
IDSS
25
A
Gate-Source Leakage Current-Forward
(Vgsf = 20 V, VDS = 0 V)
IGSSF
100
nA
Gate-Source Leakage Current-Reverse
(Vgsr = -20 V, VDS = 0 V)
IGSSR
-100
nA
Gate Threshold Voltage
(VDS = VGS, ID = 250
A)
VGS(th)
2.0
4.0
V
Static Drain-Source On-Resistance (VGS = 10 V, ID = 2.7A) (Note 3)
RDS(on)
1.5
Forward Transconductance (VDS = 15V, ID = 2.5 A) (Note 3)
gFS
2.8
mhos
Input Capacitance
Ciss
520
730
pF
Output Capacitance
Coss
170
240
pF
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz)
Crss
11
20
pF
Turn-On Delay Time
td(on)
7.0
10
ns
Rise Time
tr
9.0
20
ns
Turn-Off Delay Time
td(off)
20
40
ns
Fall Time
(VDD = 250 V, ID = 5 A,
RG = 9.1 , VGS = 10 V) (Note 3)
tf
10
20
ns
Total Gate Charge
Qg
10
nC
Gate-Source Charge
Qgs
2
nC
Gate-Drain Charge
(VDS = 400V, ID = 5A
VGS = 10 V) (Note 3)
Qgd
3
nC
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
LD
4.5
nH
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond pad)
LS
7.5
nH
SOURCE-DRAIN DIODE CHARACTERISTICS
Reverse Recovery Charge
Qrr
1.8
µC
Forward Turn-On Time
ton
**
Reverse Recovery Time
IF = 5A, di/dt = 100A/µs , TJ = 25
trr
415
ns
Diode Forward Voltage
IS = 5A, VGS = 0 V
VSD
1.5
V
Note
(1)
Repetitive rating; pulse width limited by max. junction temperature
(2)
VDD = 100V, VGS = 10V, L=10mH, IAS = 5A, RG = 25
(3)
Pulse.Test:.Duty Cycle
2% , Pulse.Width
300µs
** Negligible, Dominated by circuit inductance



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