IRF820

Page 1

GENERAL DESCRIPTION

FEATURES

This high voltage MOSFET uses an advanced termination

scheme to provide enhanced voltage-blocking capability

without degrading performance over time. In addition, this

advanced MOSFET is designed to withstand high energy in

avalanche and commutation modes. The new energy

efficient design also offers a drain-to-source diode with a

fast recovery time. Designed for high voltage, high speed

switching applications in power supplies, converters and

PWM motor controls, these devices are particularly well

suited for bridge circuits where diode speed and

commutating safe operating areas are critical and offer

additional and safety margin against unexpected voltage

transients.

‹

Robust High Voltage Termination

‹

Avalanche Energy Specified

‹

Source-to-Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

‹

Diode is Characterized for Use in Bridge Circuits

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PIN CONFIGURATION

SYMBOL

TO-220/TO-220FP

Front View

1

23

TO-252

Front View

1

23

TO-251

Front View

1

23

N-Channel MOSFET

D

S

G

ABSOLUTE MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain to Current

Continuous

Pulsed

2.0

9.0

A

Gate-to-Source Voltage

Continue

Non-repetitive

±20

±40

V

V

Total Power Dissipation

TO-251/TO-252

TO-220

TO-220FP

60

60

32

W

Operating and Storage Temperature Range

-55 to 150

Single Pulse Drain-to-Source Avalanche Energy

20

mJ

Thermal Resistance

Junction to Case

Junction to Ambient

JC

JA

1.0

62.5

/W

Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds

260