WS57C45 datasheet(8/9 Pages) STMICROELECTRONICS

номер детали	WS57C45

подробное описание детали	HIGH-SPEED 2K x 8 REGISTERED CMOS PROM/RPROM

PDF	9 Pages

Scroll/Zoom	100%

производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

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8 / 9 page

WS57C45

2-28

SYMBOLS

PARAMETER

MIN

MAX

UNITS

ILI

Input Leakage Current

–10

µA

(VIN = VCC or Gnd)

IPP

VPP Supply Current During

Programming Pulse

ICC

VCC Supply Current

VIL

Input Low Voltage

–0.1

0.8

VIH

Input High Voltage

2.0

VCC + 0.3

VOL

Output Low Voltage During Verify

0.45

(IOL = 16 mA)

VOH

Output High Voltage During Verify

2.4

(IOH = –4 mA)

SYMBOLS

PARAMETER

MIN

MAX

UNITS

tPW

Programming Pulse Width

0.1

tAS

Address Setup Time

1.0

µs

tDS

Data Setup Time

1.0

µs

tAH

Address Hold Time

1.0

µs

tDH

Data Hold Time

1.0

µs

tR, tF

VPP Rise and Fall Time

1.0

µs

tVD

Delay to VFY

1.0

µs

tVP

VFY Pulse Width

2.0

µs

tDV

VFY Data Valid

1.0

µs

tDZ

VFY HIGH to High Z

1.0

µs

NOTE: 8. VPP must not be greater than 14 volts including overshoot.

AC CHARACTERISTICS (T

A = 25 ± 5°C, VCC = 5.6 V ± 0.25 V, VPP = 13.5 ± 0.5 V)

PROGRAMMING INFORMATION

DC CHARACTERISTICS (T

A = 25 ± 5°C, VCC = 5.6 V ± 0.25 V, VPP = 13.5 ± 0.5 V)

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