VNP5N07 datasheet(3/11 Pages) STMICROELECTRONICS

3 / 11 page

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING (

∗∗)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

td(on)

td(off)

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall T ime

VDD =15 V

Id =2.5 A

Vgen =10 V

Rgen =10

Ω

(see f igure 3)

150

100

300

td(on)

td(off)

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall T ime

VDD =15 V

Id =2. 5 A

Vgen =10 V

Rgen = 1000

Ω

(see f igure 3)

150

400

3900

1100

250

600

5000

1600

(di/ dt)on

Turn-on Current Slope

VDD =15 V

ID =2.5 A

Vin =10 V

Rge n =10

Ω

µs

Total Input Charge

VDD =12 V

ID =2.5 A

Vin = 10 V

SOURCE DRAIN DIODE

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

VSD (

∗)Forward On Voltage

ISD =2. 5 A

VIN =0

1.6

trr (

∗∗)

Qrr (

∗∗)

IRRM (

∗∗)

Reverse Recovery

Time

Reverse Recovery

Charge

Reverse Recovery

Current

ISD = 2.5 A

di/ dt = 100 A/

µs

VDD =30 V

Tj =25

(see t est circuit, figure 5)

150

0.3

5.7

µC

PROTECTION

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

Ilim

Drain Current Limit

Vin =10 V

VDS =13 V

Vin =5 V

VDS =13 V

3. 5

tdlim (

∗∗) Step Response

Current Limit

Vin =10 V

Vin =5 V

µs

Tjsh (

∗∗) Overtemperature

Shutdown

150

Tjrs (

∗∗) Overtemperature Reset

135

Igf (

∗∗)

Fault Sink Current

Vin =10 V

VDS =13 V

Vin =5 V

VDS =13 V

Eas (

∗∗) Single Pulse

Avalanche Energy

st arting Tj =25

oCVDD =20 V

Vin =10 V

Rgen =1 K

Ω L= 30 mH

0. 2

(

∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

(

∗∗) Parametesguaranteed by design/characterization

VNP5N07

3/11

VNP5N07 датащи(PDF) 3 Page - STMicroelectronics

VNP5N07 датащи(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11

датащи скачать

ссылки URL