VNP20N07 datasheet(3/11 Pages) STMICROELECTRONICS

3 / 11 page

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING (

∗∗)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

td(on)

td(off)

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall T ime

VDD =15 V

Id =10 A

Vgen =10 V

Rgen =10

Ω

(see f igure 3)

240

430

150

180

400

800

300

td(on)

td(off)

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall T ime

VDD =15 V

Id =10 A

Vgen =10 V

Rgen = 1000

Ω

(see f igure 3)

800

1.5

3.5

1200

2.2

5.5

µs

(di/ dt)on

Turn-on Current Slope

VDD =15 V

ID =10 A

Vin =10 V

Rgen =10

Ω

µs

Total Input Charge

VDD =12 V

ID =10 A

Vin = 10 V

SOURCE DRAIN DIODE

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

VSD (

∗)Forward On Voltage

ISD =10 A

Vin =0

1.6

trr(

∗∗)

Qrr(

∗∗)

IRRM (

∗∗)

Reverse Recovery

Time

Reverse Recovery

Charge

Reverse Recovery

Current

ISD = 10 A

di/dt = 100 A/

µs

VDD =30 V

Tj =25

(see t est circuit, figure 5)

165

0. 55

6.5

µC

PROTECTION

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

Ilim

Drain Current Limit

Vin =10 V

VDS =13 V

Vin =5 V

VDS =13 V

tdlim(

∗∗)

St ep Response

Current Limit

Vin =10 V

Vin =5 V

140

µs

Tjsh(

∗∗)

Overtemperature

Shutdown

150

Tjrs(

∗∗)

Overtemperature Reset

135

Igf(

∗∗)

Fault Sink Current

Vin =10 V

Vin =5 V

Eas(

∗∗)

Single Pulse

Avalanche Energy

st arting Tj =25

oCVDD =20 V

Vin =10 V

Rgen =1 K

Ω L= 10 mH

0.95

(

∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

(

∗∗) Parameters guaranteed by design/characterization

VNP20N07

3/11

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