VB027BSP datasheet(3/7 Pages) STMICROELECTRONICS

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VB027BSP

ELECTRICAL CHARACTERISTICS (VCC=13.5V; Vd=5V; Tj=25ºC; Rcoil=510mΩ; Lcoil=7mH unless otherwise

specified)

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

Vcl

High voltage clamp

-40

°C≤T

j≤125°C; IC=6A

320

420

Vcg(sat)

Power stage saturation

voltage

IC=6A; VIN=4V; -40°C≤Tj≤125°C2

Id(off)

Power-off supply current

VIN=0.4V

Id(on)

Power-on supply current

VIN=4V; IC=6A; -40°C≤Tj≤125°C

160

Driving stage supply

voltage

4.5

5.5

Icl

Collector current limit

VIN=4V

8.5

10.5

Icl(td)

Collector current limit drift

with temperature

See figure 3

Ileak

Collector leakage current

Vc=125V

100

µA

VINH

High level input voltage

5.5

VINL

Low level input voltage

0.8

IINH

High level input current

200

µA

VdiagH

High level diagnostic

output voltage

REXT=15KΩ; CEXT=1nF (See figure 1)

3.5

VdiagL

Low level diagnostic

output voltage

REXT=22KΩ; CEXT=1nF (See figure 1)

0.5

IC(diag1)

First threshold level

collector current

4.25

4.5

4.75

IC(diag1)td

First threshold level

collector current drift with

temperature

See figure 4

IC(diag2)

Second threshold level

collector current

5.45

5.8

6.15

IC(diag2)td

Second threshold level

collector current drift with

temperature

See figure 5

IdiagH

Overtemperature

diagnostic current

22.6

3.2

td(off)

Turn-off delay time of

output current

IC=6A

µs

tf(off)

Turn-off fall time of output

current

IC=6A

µs

Es/b

Single pulse avalanche

energy

300

Tint

Temperature ofdiagnostic

shift

130

150

170

°C

Thys

Thermal hysteresis

°C

Diode forward voltage

IC= -10A

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