TSDF02424X datasheet(2/5 Pages) VISHAY

2 / 5 page

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Document Number 85088

Rev. 1.3, 05-Sep-08

TSDF02424X/TSDF02424XR

Vishay Semiconductors

All of following data and characteristics are valid

for operating either amplifier 1 (pin 1, 3, 2, 5) or

amplifier 2 (pin 6, 4, 2, 5)

Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified

Maximum Thermal Resistance

1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35

μm Cu

Electrical DC Characteristics

Tamb = 25 °C, unless otherwise specified

Remark on improving intermodulation behavior:

By setting RG1 smaller than 56 kΩ, typical value of IDSO will raise and improved intermodulation behavior will be performed.

Parameter

Test condition

Symbol

Value

Unit

Drain - source voltage

VDS

Drain current

Gate 1/Gate 2 - source peak

current

± IG1/G2SM

Gate 1/Gate 2 - source voltage

+ VG1/± G2SM

- VG1SM

1.5

Total power dissipation

Tamb ≤ 60 °C

Ptot

160

Channel temperature

TCh

150

°C

Storage temperature range

Tstg

- 55 to + 150

°C

Parameter

Test condition

Symbol

Value

Unit

Channel ambient

RthChA

450

K/W

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Drain - source breakdown

voltage

ID = 10 μA, VG1S = VG2S = 0

V(BR)DSS

Gate 1 - source breakdown

voltage

+ IG1S = 10 mA, VG2S = VDS = 0 + V(BR)G1SS

710

Gate 2 - source breakdown

voltage

± IG2S = 10 mA, VG2S = VDS = 0 ± V(BR)G2SS

710

Gate 1 - source leakage current + VG1S = 5 V, VG2S = VDS = 0

+ IG1SS

Gate 2 - source leakage current ± VG2S = 5 V, VG1S = VDS = 0

± IG2SS

Drain - source operating current VDS = VRG1 = 5 V, VG2S = 4 V,

RG1 = 56 kΩ

IDSO

813

Gate 1 - source cut-off voltage

VDS = 5 V, VG2S = 4, ID = 20 μAVG1S(OFF)

0.5

1.3

Gate 2 - source cut-off voltage

VDS = VRG1 = 5 V, RG1 = 56 kΩ,

ID = 20 μA

VG2S(OFF)

0.8

1.0

1.4

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