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SAC18 датащи(PDF) 1 Page - Vishay Siliconix |
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SAC18 датащи(HTML) 1 Page - Vishay Siliconix |
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1 / 4 page ![]() SAC5.0 thru SAC50 Vishay General Semiconductor Document Number: 88379 Revision: 20-Oct-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 Low Capacitance TRANSZORB® Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Excellent clamping capability • 500 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate (duty cycle): 0.01 % • Very fast response time • Low incremental surge resistance • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial and telecommunication. MECHANICAL DATA Case: DO-204AC, molded epoxy over passivated body Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes TVS cathode end PRIMARY CHARACTERISTICS VWM 5.0 V to 50 V PPPM 500 W PD 3.0 W TJ max. 175 °C DO-204AC (DO-15) Note: (1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2 MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Peak pulse power dissipation with a 10/1000 µs waveform (1) PPPM 500 W Power dissipation on infinite heatsink at TL = 75 °C (Fig. 2) PD 3.0 W Peak pulse power surge current with a 10/1000 µs waveform (Fig. 3) (1) IPPM See next table A Operating junction and storage temperature range TJ, TSTG - 55 to + 175 °C |
Аналогичный номер детали - SAC18 |
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Аналогичное описание - SAC18 |
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