TIP135 datasheet(2/4 Pages) STMICROELECTRONICS

номер детали	TIP135

подробное описание детали	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

PDF	4 Pages

Scroll/Zoom	100%

производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

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THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

1.78

63. 5

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symbo l

Parameter

Test Con ditions

Min.

T yp.

Max.

Unit

ICEO

Collector Cut -of f

Current (IB =0)

VCE = Half Rated VCEO

0. 5

ICBO

Collector Cut -of f

Current (IE =0)

VCB =Rated VCBO

0. 2

IEBO

Emitter Cut-off Current

(IC =0)

VEB =5 V

VCEO(sus )* Collector-Emitter

Sustaining Voltage

(IB =0)

IC =30 mA

for TIP135

for T IP132/T IP137

100

VCE(sat)*

Collector-Emitter

Sat uration Volt age

IC =4 A

I B =16 mA

IC =6 A

I B =30 mA

VBE *

Base-Emitter Voltage

IC =4 A

VCE =4 V

2. 5

hFE*

DC Current Gain

IC =1 A

VCE =4 V

IC =4 A

VCE =4 V

500

1000

15000

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

For PNP types voltage and current values are negative.

Power Derating Curve

Safe Operating Areas

TIP132 / TIP135 / TIP137

2/4

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