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THD200FI датащи(PDF) 5 Page - STMicroelectronics

номер детали THD200FI
подробное описание детали  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
PDF  7 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

THD200FI датащи(HTML) 5 Page - STMicroelectronics

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In order to saturate the power switch and reduce
conduction losses, adequate direct base current
IB1 has to be provided for the lowest gain hFE at Tj
= 100
oC (line scan phase). On the other hand,
negative base current IB2 must be provided turn
off the power transistor (retrace phase). Most of
the
dissipation, especially in
the
deflection
application, occurs at switch-off so it is essential
to determine the value of IB2 which minimizes
power losses, fall time tf and, consequently, Tj.A
new set of curves have been defined to give total
power losses, ts and tf as a function of IB2 at both
32 KHz and 64 KHz scanning frequencies in
order to choice the optimum negative drive. The
test circuit is illustrated in fig. 1.
Inductance L1 serves to control the slope of the
negative base current IB2 in order to recombine
the excess carriers in the collector when base
current is still present, thus avoiding any tailing
phenomenon in the collector current.
The values of L and C are calculated from the
following equations:
1
2
L
(IC)2 =
1
2
C
(VCEfly)2
ω= 2 πf =
1
√
L C
Where IC = operating collector current, VCEfly=
flyback voltage, f= frequency of oscillation during
retrace.
BASE DRIVE INFORMATION
Figure 1: Inductive Load Switching Test Circuit.
Figure 2: Switching Waveforms in a Deflection Circuit.
THD200FI
5/7



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