MBRB1045 datasheet(1/6 Pages) VISHAY

номер детали	MBRB1045

подробное описание детали	Schottky Rectifier, 10 A

PDF	6 Pages

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производитель	VISHAY [Vishay Siliconix]

домашняя страница	http://www.vishay.com

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Document Number: 93975

For technical questions, contact: diodes-tech@vishay.com

www.vishay.com

Revision: 22-Aug-08

1

Schottky Rectifier, 10 A

MBRB10.. Series

Vishay High Power Products

FEATURES

• 150 °C TJ operation

•D2PAK package

• Low forward voltage drop

• High frequency operation

• High purity, high temperature epoxy encapsulation for

enhanced mechanical strength and moisture resistance

• Guard ring for enhanced ruggedness and long term

reliability

• Designed and qualified for Q101 level

DESCRIPTION

This Schottky rectifier has been optimized for low reverse

leakage at high temperature. The proprietary barrier

technology allows for reliable operation up to 150 °C junction

temperature. Typical applications are in switching power

supplies, converters, freewheeling diodes, and reverse

battery protection.

PRODUCT SUMMARY

IF(AV)

10 A

VR

35/45 V

IRM

15 mA at 125 °C

D2PAK

Anode

1

3

Base

cathode

2

N/C

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

CHARACTERISTICS

VALUES

UNITS

IF(AV)

Rectangular waveform

10

A

IFRM

TC = 135 °C

20

VRRM

35/45

V

IFSM

tp = 5 µs sine

1060

A

VF

10 Apk, TJ = 125 °C

0.57

V

TJ

Range

- 65 to 150

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

MBRB1035

MBRB1045

UNITS

Maximum DC reverse voltage

VR

35

45

V

Maximum working peak reverse voltage

VRWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average forward current

IF(AV)

TC = 135 °C, rated VR

10

A

Peak repetitive forward current

IFRM

Rated VR, square wave, 20 kHz, TC = 135 °C

20

Non-repetitive surge current

IFSM

5 µs sine or 3 µs rect. pulse

Following any rated load condition

and with rated VRRM applied

1060

Surge applied at rated load conditions halfwave,

single phase, 60 Hz

150

Non-repetitive avalanche energy

EAS

TJ = 25 °C, IAS = 2 A, L = 4 mH

8

mJ

Repetitive avalanche current

IAR

Current decaying linearly to zero in 1 µs

Frequency limited by TJ maximum VA = 1.5 x VR typical

2A

Аналогичный номер детали - MBRB1045

производитель	номер детали	датащи	подробное описание детали
General Semiconductor	MBRB1045	71Kb / 2P	SCHOTTKY RECTIFIER
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ON Semiconductor	MBRB1045	83Kb / 6P	SWITCHMODE Schottky Power Rectifier Surface Mount Power Package February, 2006 ??Rev. 6
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